APT45GR65BSCD10Description Description_APT45GR65BSCD10Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	118 A
Current - Collector Pulsed (Icm)	224 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 45A
Power - Max	543 W
Switching Energy	-
Input Type	Standard
Gate Charge	203 nC
Td (on/off) @ 25°C	15ns/100ns
Test Condition	433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	80 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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