IXGX35N120CD1Description Description_IXGX35N120CD1Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	140 A
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 35A
Power - Max	350 W
Switching Energy	3mJ (off)
Input Type	Standard
Gate Charge	170 nC
Td (on/off) @ 25°C	50ns/150ns
Test Condition	960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)	60 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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