GT30J121(Q)Description Description_GT30J121(Q)Specifications_Toshiba Semiconductor and Storage-www.samsong.com

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,292(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2.76412	$2.76412

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	*
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Power - Max	170 W
Switching Energy	1mJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	90ns/300ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

Other

Price advantage, GT30J121(Q) is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IXGH39N60B	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT 600V 76A 200W TO247AD	No price	In Stock:17986
IRGP4063D-EPBF	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 600V 96A 330W TO247AD	No price	In Stock:17988
IRGP4066-EPBF	International Rectifier	Transistors - IGBTs - Single	Datasheet	IGBT	$3.93820	In Stock:2260
IRG7PG35UPBF	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 1000V 55A 210W TO247AC	No price	In Stock:17992
IXA12IF1200TC-TUB	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT 1200V 20A 85W TO268	$3.76629	In Stock:17994