IXXH30N65C4D1Description Description_IXXH30N65C4D1Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	62 A
Current - Collector Pulsed (Icm)	136 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Power - Max	230 W
Switching Energy	1.1mJ (on), 400µJ (off)
Input Type	Standard
Gate Charge	47 nC
Td (on/off) @ 25°C	20ns/140ns
Test Condition	400V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr)	72 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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