HGTP10N120BNDescription Description_HGTP10N120BNSpecifications

Transistors - IGBTs - Single

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In Stock：19,682(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298 W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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