IXYP10N65B3D1Description Description_IXYP10N65B3D1Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	32 A
Current - Collector Pulsed (Icm)	62 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 10A
Power - Max	160 W
Switching Energy	300µJ (on), 200µJ (off)
Input Type	Standard
Gate Charge	20 nC
Td (on/off) @ 25°C	17ns/125ns
Test Condition	400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)	29 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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