IXSK30N60BD1Description Description_IXSK30N60BD1Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	55 A
Current - Collector Pulsed (Icm)	110 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 55A
Power - Max	200 W
Switching Energy	1.5mJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	30ns/150ns
Test Condition	480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264AA(IXSK)

Other

Price advantage, IXSK30N60BD1 is available in stock and can be delivered on the same day

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