IRG4PF50WDPBFDescription Description_IRG4PF50WDPBFSpecifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	51 A
Current - Collector Pulsed (Icm)	204 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 28A
Power - Max	200 W
Switching Energy	2.63mJ (on), 1.34mJ (off)
Input Type	Standard
Gate Charge	160 nC
Td (on/off) @ 25°C	71ns/150ns
Test Condition	720V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr)	90 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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