2N5639Description Description_2N5639Specifications_Fairchild Semiconductor-www.samsong.com

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	35 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	25 mA @ 20 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	-
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 12V (VGS)
Resistance - RDS(On)	60 Ohms
Power - Max	310 mW
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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