FJN598JCTADescription Description_FJN598JCTASpecifications

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	20 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	100 µA @ 5 V
Current Drain (Id) - Max	1 mA
Voltage - Cutoff (VGS off) @ Id	600 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	3.5pF @ 5V
Resistance - RDS(On)	-
Power - Max	150 mW
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3

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