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Transistors - Bipolar - RF
MDS60L Picture

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MDS60L

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In Stock:19,136(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)
-
Gain
10dB
Power - Max
120W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA, 5V
Current - Collector (Ic) (Max)
4A
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Package / Case
55AW
Supplier Device Package
55AW
Other
Price advantage, MDS60L is available in stock and can be delivered on the same day
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