MS1006Description Description_MS1006Specifications_Microsemi Corporation-www.samsong.com

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,380(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	14dB
Power - Max	127W
DC Current Gain (hFE) (Min) @ Ic, Vce	19 @ 1.4A, 6V
Current - Collector (Ic) (Max)	3.25A
Operating Temperature	200°C
Mounting Type	Stud Mount
Package / Case	M135
Supplier Device Package	M135

Other

Price advantage, MS1006 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
2SC5751-T2-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 15GHZ SOT343F	No price	In Stock:18148
2SC3583-T1B-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 10V 9GHZ SOT23	No price	In Stock:18150
BFR94A,215	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	TRANS NPN 5GHZ TO-236AB	$0.14250	In Stock:8062
UPA895TS-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS 2NPN 5.5V 6.5GHZ 6SMINI	No price	In Stock:18154
2SC4536-AZ	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V SOT89	No price	In Stock:18158