SI1539DDL-T1-GE3Description Description_SI1539DDL-T1-GE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs	388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	28pF @ 15V, 21pF @ 15V
Power - Max	340mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6

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