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SI1035X-T1-E3 Picture

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SI1035X-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N/P-CH 20V SOT563F
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In Stock:18,004(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
180mA, 145mA
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
250mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89-6
Other
Price advantage, SI1035X-T1-E3 is available in stock and can be delivered on the same day
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