2SJ559-T1-ADescription Description_2SJ559-T1-ASpecifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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In Stock：11,444(Ref. price)

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1	$0.14400	$0.14400

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	13Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	1.7V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	5 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	SC-75-3, USM
Package / Case	SC-75, SOT-416

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Price advantage, 2SJ559-T1-A is available in stock and can be delivered on the same day

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