MCH3382-TL-WDescription Description_MCH3382-TL-WSpecifications

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Vgs (Max)	±9V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70FL/MCPH3
Package / Case	3-SMD, Flat Lead

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