TSM4ND60CI C0GDescription Description_TSM4ND60CI C0GSpecifications_Taiwan Semiconductor Corporation-www.samsong.com

MOSFETs - Single

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In Stock：2,788(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	582 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	41.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220
Package / Case	TO-220-3 Full Pack, Isolated Tab

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