IXBX25N250Description Description_IXBX25N250Specifications

Transistors - IGBTs - Single

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In Stock：1,364(Ref. price)

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	2500 V
Current - Collector (Ic) (Max)	55 A
Current - Collector Pulsed (Icm)	180 A
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 25A
Power - Max	300 W
Switching Energy	-
Input Type	Standard
Gate Charge	103 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	1.6 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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Price advantage, IXBX25N250 is available in stock and can be delivered on the same day

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